SNUEI

Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors

2016 · IEEE Sensors Journal

저자

Hongyun So, 임종우 (Jongwoo Lim), Debbie G. Senesky

연구주제

GaN-based semiconductor devices and materials

NTIS 과학기술표준분류

에너지/자원만에너지·환경·원자력 확장

지원 과제·AI 키워드로 잡을 근거가 없어 분류하지 않았다.

AI 연구 키워드·방법

aluminum gallium nitride heterostructure high temperature sensor ultraviolet photodetector

키워드 (OpenAlex)

AlGaN/GaN heterostructures ultraviolet photodetectors surface texturing two-dimensional electron gas persistent photoconductivity optical trapping electrical resistance reduction electron-hole recombination

초록

Three-dimensional heterostructured AlGaN/GaN ultraviolet (UV) photodetectors were microfabricated using V-grooved silicon(111) surfaces and metal organic chemical vapor deposition. This novel sensor platform enabled an increase in sensitivity and operation at high temperatures (up to 200°C). More specifically, texturizing the highly conductive 2-D electron gas using the V-groove sensor surfaces, resulted in higher photodetector sensitivity (57.4% increase at room temperature and 139% at 200°C) compared with conventional designs on planar substrates due to the increased absorption of incident UV light (optical trapping). In addition, a 53% reduction in electrical resistance at room temperature and 27.3% at 200°C were observed due to the increased surface area. The decay time for the non-exponential persistent photoconductivity decreased significantly from 327 to 34 sec as the temperature …

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교수 1

임종우

연구주제 1

GaN-based semiconductor devices and materials