SNUEI

Top‐Down Synthesis of Wurtzite Gallium Nitride Colloidal Quantum Dots via Defect‐Driven Fragmentation

2026 · Small Methods

저자

Yangpil Jang, Kwangwook Kim, Hayeon Baek, Kyusung Kim, 박정원 (Jungwon Park), 박정원 (Jungwon Park), Jeong Woo Han, Jongnam Park, Jongnam Park

연구주제

GaN-based semiconductor devices and materials · Quantum Dots Synthesis And Properties

NTIS 과학기술표준분류

에너지/자원만에너지·환경·원자력 확장

지원 과제·AI 키워드로 잡을 근거가 없어 분류하지 않았다.

AI 연구 키워드·방법

colloidal quantum dot defect driven fragmentation gallium nitride quantum dot

키워드 (OpenAlex)

gallium nitride colloidal quantum dots wurtzite structure top-down synthesis native point defects defect segregation crystal fragmentation low-temperature synthesis

초록

ABSTRACT The synthesis of colloidal gallium nitride (GaN) quantum dots (QDs) is limited by the instability of organic ligands at the high GaN crystallization temperatures. Here, we report a top‐down, defect‐driven fragmentation strategy that yields high‐purity colloidal GaN QDs at 50°C and ambient pressure. This process is facilitated by nitrogen‐containing organic solvents, which we propose lower the energy barrier for native point defect segregation to the crystal surface, thereby promoting controlled structural subdivision. Defect extraction is supported by the progressive suppression of deep‐level defect luminescence and the emergence of sharp, quantum‐confined emission with a full width at half maximum of 38.8 nm. Direct observation of crystal fragmentation via identical‐location transmission electron microscopy corroborates the mechanism. Post‐synthesis analysis reveals extensive c…

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교수 1

박정원

연구주제 1

GaN-based semiconductor devices and materials