Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching
2016 · Advanced Materials
저자
Jaeho Choi, Sunghak Park, Joohee Lee, Kootak Hong, Do‐Hong Kim, Cheon Woo Moon, Gyeong Do Park, Jun Min Suh, Jinyeon Hwang, Soo Young Kim, Hyun Suk Jung, Nam‐Gyu Park, Seungwu Han, 남기태 (Ki Tae Nam), Ho Won Jang
연구주제
Advanced Memory and Neural Computing · Perovskite Materials and Applications · Ferroelectric and Negative Capacitance Devices
NTIS 과학기술표준분류
에너지/자원만에너지·환경·원자력 확장
가장 가까운 분류(전기/전자 > 디스플레이 > 디스플레이 부품/소재)가 에너지·환경·원자력 확장 범위 밖이다.
AI 연구 키워드·방법
organolead halide perovskite resistive switching memory
키워드 (OpenAlex)
organolead halide perovskites methylammonium lead iodide resistive switching multilevel memory low-voltage operation electroforming-free switching vacancy migration filamentation
초록
Organolead halide perovskites are used for low-operating-voltage multilevel resistive switching. Ag/CH3 NH3 PbI3 /Pt cells exhibit electroforming-free resistive switching at an electric field of 3.25 × 10(3) V cm(-1) for four distinguishable ON-state resistance levels. The migration of iodine interstitials and vacancies with low activation energies is responsible for the low-electric-field resistive switching via filament formation and annihilation.
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