Advanced Memory and Neural Computing
연구주제 · Electrical and Electronic Engineering
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남기태 · 박정원 · 선정윤 · 임종우 · 이철호 · 이윤석
논문 23
Vertical Metal‐Oxide Electrochemical Memory for High‐Density Synaptic · Artificial synaptic devices based on biomimetic electrochemistry: A re · Elucidating Ionic Programming Dynamics of Metal‐Oxide Electrochemical · Organolead Halide Perovskites for Low Operating Voltage Multilevel Res · 2D materials-based 3D integration for neuromorphic hardware · Implantable Ionic Memristors Based on Natural Polymer Heterojunctions · Circular polarization sensitive opto-neuromorphic operation at plasmon · Synaptic Barristor Based on Phase‐Engineered 2D Heterostructures · Threshold Switching in Te-SbO Films for the Selection Device of Crossb · Wafer-Scale All-Silicon Self-Rectifying Memristor for Synaptic Respons · Two-Terminal Lithium-Mediated Artificial Synapses with Enhanced Weight · Artificial neuromodulator–synapse mimicked by a three-terminal vertica · Heterosynaptic MoS2 Memtransistors Emulating Biological Neuromodulatio · Phenol-Assisted Electrochemical Metallization of Peptide-Based Bimodal · Synaptic transistors based on a tyrosine-rich peptide for neuromorphic · Fully Degradable Memristors and Humidity Sensors Based on a Tyrosine-R · In-sensor multilevel image adjustment for high-clarity contour extract · Humidity-induced synaptic plasticity of ZnO artificial synapses using · Tyrosine-mediated analog resistive switching for artificial neural net · Proton-enabled activation of peptide materials for biological bimodal · Structurally Engineered Nanoporous Ta2O5–x Selector-Less Memristor for · Memristors Based on 2D Materials as an Artificial Synapse for Neuromor · Mechanically Durable Intrinsically Stretchable Neuromorphic Devices vi