Vertical Metal‐Oxide Electrochemical Memory for High‐Density Synaptic Array Based High‐Performance Neuromorphic Computing

Abstract Cross‐point arrays of analog synaptic devices are expected to realize neuromorphic computing hardware for neural network computations with compelling speed boost and superior energy efficiency, as opposed to the conventional hardware based on the von Neumann architecture. To achieve desired characteristics of analog synaptic devices for fully parallel vector–matrix multiplication and vector–vector outer‐product updates, metal‐oxide based electrochemical random‐access memory (ECRAM) is proposed as a promising synaptic device due to its complementary metal‐oxide‐semiconductor‐compatibility and outstanding synaptic characteristics over other non‐volatile memory candidates. In this work, ECRAM devices with 3D vertical structure is fabricated to demonstrate a minimal 4F2 cell size, highly scalable channel volume and low programming energy, providing optimized synaptic device performa…