SNUEI

Semiconductor materials and devices

연구주제 · Electrical and Electronic Engineering

참여 교수

교수학과논문
임종우화학부1
박상욱기계공학부1
박정원화학생물공학부1
손창윤화학부1
차석원기계공학부1
강기석재료공학부1
이철호전기정보공학부1

연결되는 NTIS 분류

에너지/자원만에너지·환경·원자력 확장

신재생에너지 1 전지 1

논문 (피인용 순)

연도논문SNUEI 저자피인용
2018Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors
Chemistry of Materials
이철호135
2016Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1) interfaces
Applied Surface Science
박상욱32
2021Growth modulation of atomic layer deposition of HfO 2 by combinations of H 2 O and O 3 reactants
Dalton Transactions
박정원23
2020Tunable Dielectric and Thermal Properties of Oxide Dielectrics via Substrate Biasing in Plasma-Enhanced Atomic Layer Deposition
ACS Applied Materials & Interfaces
임종우16
2022Operating Cost Savings in the Atomic Layer Deposition Process of Ultrathin Electrolyte for Solid Oxide Fuel Cells by Applying Oxygen Plasma 신재생에너지 › 연료전지
International Journal of Precision Engineering and Manufacturing
차석원8
2020Aqueous ionic effect on electrochemical breakdown of Si-dielectric–electrolyte interface 전지 › 이차전지
Scientific Reports
강기석8
2024Molecular Engineering of Coordination Ligand for Multifunctional Sol–Gel Oxides
Advanced Materials
손창윤6

인접 그래프

노드 hover = 이웃 강조 · 1회 클릭 = 고정 · 고정된 노드 다시 클릭 = 페이지 이동

이 문서와 연결된 페이지

교수 6

강기석 · 박정원 · 차석원 · 임종우 · 손창윤 · 박상욱

논문 7

Operating Cost Savings in the Atomic Layer Deposition Process of Ultra · Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1 · Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibito · Molecular Engineering of Coordination Ligand for Multifunctional Sol–G · Aqueous ionic effect on electrochemical breakdown of Si-dielectric–ele · Tunable Dielectric and Thermal Properties of Oxide Dielectrics via Sub · Growth modulation of atomic layer deposition of HfO 2 by combinations

학문분야 1

Electrical and Electronic Engineering