Modular van der Waals MOSFETs through layer-by-layer chalcogen substitutions
2026 · Science
저자
Seok Young Min, Hyunje Cho, Sukho Lee, Choi Jaeho, 김태호, Jong Yun Choi, H. M. Park, Junsoo Yoon, Taejoon Mo, Chumki Nayak, Gi‐Yeop Kim, Sung‐Hyuk Her, 이철호 (Chul‐Ho Lee), Yong‐Sung Kim, Si‐Young Choi, Cheol‐Joo Kim, Moon‐Ho Jo
연구주제
2D Materials and Applications · Transition Metal Oxide Nanomaterials · Graphene research and applications
NTIS 과학기술표준분류
에너지/자원만에너지·환경·원자력 확장
가장 가까운 분류(전기/전자 > 반도체소자 및 시스템 > Si 소자)가 에너지·환경·원자력 확장 범위 밖이다.
AI 연구 키워드·방법
chalcogen substitution 전계효과 트랜지스터(FET) 이셀레늄화텅스텐(WSe2) 반데르발스 이종구조
키워드 (OpenAlex)
van der Waals heterostructures transition metal dichalcogenides chalcogen substitution WSe2 WOx tungsten disulfide WTe2 metal-oxide-semiconductor field-effect transistors
초록
In two-dimensional transition-metal dichalcogenides (TMDCs), the local electrostatic field of the chalcogen p -orbitals dictates the crystal field splitting of the transition metal d -orbitals, stabilizing diverse electronic states from semiconducting and semimetallic to exotic topological phases. On-demand substitution of the lattice chalcogens is therefore an efficient route to tuning TMDC electronic phases. Here, we custom-molded van der Waals (vdW) heterostructures by layer-by-layer vapor-phase chalcogen substitution starting from p -type WSe 2 multilayers into which we locally inscribed insulating WO x , n -type WS 2 , and semimetallic WTe 2 . This spatially precise conversion seamlessly integrated distinct electronic phases, both vertically and laterally, into modular vdW semiconductor heterostructures that are otherwise inaccessible. As a demonstration, we integrated WO x /WSe 2 l…
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NTIS 성과DB(2020–24)에서 DOI 매칭 없음
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