Advances and challenges in 2D semiconductor devices for monolithic 3D integration
2025 · 2D Materials
저자
Jaewoong Joo, Jung Hoon Kang, 이철호 (Chul‐Ho Lee), Gwan‐Hyoung Lee
연구주제
NTIS 과학기술표준분류
에너지/자원만에너지·환경·원자력 확장
가장 가까운 분류(전기/전자 > 반도체소자 및 시스템 > 반도체 재료)가 에너지·환경·원자력 확장 범위 밖이다.
AI 연구 키워드·방법
전계효과 트랜지스터(FET) 고유전율 절연막(high-k) monolithic three dimensional integration 2차원 반도체
키워드 (OpenAlex)
two-dimensional semiconductors monolithic 3D integration 2D field-effect transistors van der Waals heterostructures high-k dielectrics heterogeneous integration vertical stacking heat dissipation
초록
Abstract 2D semiconductors offer transformative advantages for monolithic 3D (M3D) integration, including atomic-scale thickness, high carrier mobility, and compatibility with low-temperature fabrication processes. These properties minimize interlayer interference and enable efficient heterogeneous integration of diverse functionalities, such as logic, memory, and sensing, on a single chip platform. Their van der Waals surfaces with no dangling bond allow for clean interfaces, while high thermal conductivity facilitates efficient heat dissipation in vertically stacked architectures. This perspective article highlights the promise of 2D semiconductors and 2D field-effect transistors as key enablers for M3D integration, and provides a comprehensive overview of recent advances in 2D channel synthesis, defect and doping control, ohmic contact engineering, and high- k dielectric integration. …
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